It is towards the laser indication of Laser Pointer .
Optical technology for data relay has several advantages: the ability to provide high data rate, low power terminals, security and anti-jamming communications. Earth observation, telecommunications services, scientific applications, and space operations can truly benefit from this data transmission method. March 22, 2006 31, to optical communication experiments between the optical ground station of the Japan National ICT Institute and the Optical Inter-orbit Communications Engineering Test Satellite. This is the optical communication experiments between the world's first successful low-earth-orbiting satellites and ground stations. June 7, 2006, the Japanese use a laser beam to the success of the optical communication experiment between the Optical Inter-orbit Communications Engineering Test Satellite and mobile earth stations of the German Aerospace Center. It is the front end of Laser Pointer .
The successful trial means a satellite and mobile optical ground station to establish the possibility of a flexible optical communication networks. Accumulated some experience, will eventually launch two practical data relay satellite. Another U.S. NASA, the European Space Agency and Japan Aerospace Exploration Agency in the development of S-and Ka-band data relay and tracking system, the three parties intended to create interoperable systems to achieve tripartite networking. Aggressively pursue the advanced nature of a feature repeatedly failed in space activities, it is flawed. 4 data relay satellite technology - laser communication, April 25, 23, 35 points, China's first data relay satellite "day chain 01 Star" at the Xichang Satellite Launch Center Long March III C "The carrier rocket successfully launched.1970, a laser wavelength of 9000A, the room temperature continuous double heterojunction caAs-GaAIAs GaAs lasers. The birth of the double heterostructure laser (DHL), the available band continue to broaden the line width and tuning performance gradually improved its structure is characterized by the growth of a thin layer only 0.2tt.m thick, not doping, has a narrow bandgap material between the P-type and n-type material, Note A .00 carrier is limited in the region, and thus less current injection can be achieved reversal of the carrier number in the semiconductor laser device is more mature, better performance, application broader electrically injected GaAs diode laser with a double heterostructure. homojunction heterojunction power type from the type of information to the laser superiority is also becoming increasingly apparent, wide spectral range, enhanced coherence semiconductor lasers has opened a new era in the development of laser applications. Keywords: stimulated emission; light field; homojunction; heterojunction; high-power semiconductor lasers.
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